UOE SSO10T UP1R5N08LH 80V/300A MOSFET breaks the power density boundary
In the market trend of power electronics systems continuing to evolve towards high power density, UOE officially launched the N-channel enhanced MOSFET UP1R5N08LH based on the advanced SSO10T package. With breakthrough parameters such as 80V withstand voltage, 300A continuous current, 1.3mΩ ultra-low on-resistance, the product has redefined the performance standards of power devices in medium and high voltage and high current scenarios, providing better solutions for industrial frequency conversion, new energy inverter, high power home appliances and other applications.
First, SSO10T package: the ultimate carrier of high-density systems
As a standardized package for Infineon's PG-LHDSO-10, the SSO10T delivers three core benefits through structural innovation:
1. Revolutionary breakthrough in power density
The compact 10-pin design (package size 5.48×5.15mm) reduces the area of the conventional TO-263 package by 42% and increases the current carrying capacity per unit area TO 58A/mm². With 1.0mm pin spacing, it supports PCB layout optimization to achieve system-level space compression.
2. Thermal management performance has improved
The patented copper clip interconnect technology enables RθJC (junction to shell thermal resistance) to be as low as 0.4 ° C /W, 60% less than the D²PAK package. When paired with a 1in² pad, RθJA (junction thermal resistance to the environment) is only 57 ° C /W, supporting 375W continuous power dissipation. The measured data show that the temperature rise of the shell under 50A load is 18℃ lower than that of the competing product.
3. Intelligent manufacturing adaptability
The full surface mount design is compatible with high-speed SMT production lines, and the 0.42mm pin thickness ensures a welding yield of > 99.97%. The unique "stepped" pin structure (tolerance ±0.05mm) effectively solves the thermal stress deformation problem during reflow welding of high-current devices.
Second, UP1R5N08LH core technology breakthrough
Based on the UOE third generation Trench Cell process, the device has achieved several performance breakthroughs in the SSO10T package:
1. Very low on-off loss
The typical RDS(on) value at 10V drive is 1.3mΩ (max 1.5mΩ), which is 22% lower than similar products
The 6V drive still maintains a 2.2mΩ on-impedance for low grid voltage applications
Under 50A load, the conduction loss is only 3.25W, and the system efficiency is increased by 0.8%
2. Dynamic performance optimization
Switching speed combination td(on)+tr=81ns, td(off)+tf=150ns
Total gate charge Qg=141nC, drive power consumption is reduced by 35%
Reverse recovery time trr=54ns, effectively inhibit bridge arm crosstalk
3. Reliability under extreme conditions
Monopulse avalanche energy 950mJ (VDD=50V)
Support 1200A pulse current (300μs pulse width)
Junction temperature range -55~175℃, through 3000 temperature cycle certification
Third, the key advantages of competitive products
Compared with the same package of international brand products, UP1R5N08LH shows significant advantages:
| Parameter item | UP1R5N08LH | Industry benchmark product | advantage margin |
|---|---|---|---|
| RDS(on)@10V | 1.3mΩ | 1.7mΩ | -23.5% |
| ID@100℃ | 229A | 180A | +27.2% |
| Thermal resistance RθJC | 0.4℃/W | 0.6℃/ W | -33.3% |
| Avalanche energy EAS | 950mJ | 800mJ | +18.7% |
| Switching loss (Eon+Eoff) | 1.2mJ | 1.5 MJ | -20% |
4. Typical application scenarios
1. New energy inverter system
In the DC-AC segment of the PV/energy storage inverter, the dual devices can support 20kW power level in parallel. The 1.3mΩ on-impedance makes the inverter efficiency more than 99%, and the 950mJ avalanche capability perfectly responds to the voltage surge of the photovoltaic array.
2. Industrial frequency conversion drive
Support 150kW motor driven three-phase bridge arm design, 300A continuous current to meet the requirements of heavy start. The optimized Qg characteristics allow the switching frequency to be increased to 50kHz, helping to miniaturize the inverter.
3. Ultra HD display power supply
In the 8K TV's LED backlight drive, the 57ns drop time allows precise control of PWM dimming. The 1.3V body diode voltage drop reduces the continuous current loss, and the standby power consumption of the whole machine is < 0.5W.
4. Quick charging pile power module
The LLC resonant topology of the 100kW charging pile is supported, and the 1200A pulse capability easily responds to the transient requirements of the battery pack. 175℃ junction temperature ensures stable operation in the whole temperature range of -40℃~85℃.
5. Supporting technical support
UOE offers a complete application ecosystem:
Simulation model: SPICE/PLECS dual-platform device model
Reference design: 100kW three-phase inverter topology scheme (efficiency 98.7%)
Test report: Full set of EMI/THERMAL/SOA certification data
Failure Analysis: Dedicated FAE team provides failure mode library
UP1R5N08LH has been mass-produced, using 13-inch tray packaging (4000pcs/ plate), with automatic placement equipment up to 98CPH mounting speed. Contact UOE Regional Technical Support for samples and evaluation boards to usher in a new era of high-density power design.
